دیتاشیت CSD18533Q5A
مشخصات دیتاشیت
| نام دیتاشیت |
CSD18533Q5A
|
| حجم فایل |
866.777
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
13
|
مشخصات
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Texas Instruments CSD18533Q5A
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
3.2W;116W
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Total Gate Charge (Qg@Vgs):
36nC@10V
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Drain Source Voltage (Vdss):
60V
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Input Capacitance (Ciss@Vds):
2750pF@30V
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Continuous Drain Current (Id):
17A;100A
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Gate Threshold Voltage (Vgs(th)@Id):
2.3V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
5.9mΩ@10V,18A
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Package:
VSONP-8
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Manufacturer:
Texas Instruments
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Power Dissipation (Max):
3.2W (Ta), 116W (Tc)
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Input Capacitance (Ciss) (Max) @ Vds:
2750pF @ 30V
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Vgs (Max):
±20V
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Supplier Device Package:
8-VSONP (5x6)
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Packaging:
Cut Tape (CT)
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Mounting Type:
Surface Mount
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Base Part Number:
CSD1853
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Vgs(th) (Max) @ Id:
2.3V @ 250µA
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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FET Feature:
-
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Package / Case:
8-PowerTDFN
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Part Status:
Active
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Series:
NexFET™
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Gate Charge (Qg) (Max) @ Vgs:
36nC @ 10V
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Rds On (Max) @ Id, Vgs:
5.9mOhm @ 18A, 10V
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Current - Continuous Drain (Id) @ 25°C:
17A (Ta), 100A (Tc)
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Drain to Source Voltage (Vdss):
60V
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detail:
N-Channel 60V 17A (Ta), 100A (Tc) 3.2W (Ta), 116W (Tc) Surface Mount 8-VSONP (5x6)
